A 4.4-6.4-GHz compact SiGe power amplifier with 30.5-dBm psat and 34.8% PAE based on triple-tank power combiner @article{Liu2023A4C, title={A 4.4-6.4-GHz compact SiGe power amplifier with 30.5-dBm psat and 34.8\% PAE based on triple-tank power combiner}, author={Wangyu Liu and Zonglin Ma and Kaixue Ma and Hai-Hong Fu}, journal={IEICE …
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Читать далееThis paper presents a two-stage wideband W-band power amplifier (PA) designed in 130 nm SiGe BiCMOS technology. By employing the gain-distribution technique, the PA delivers a flat gain response over a wide bandwidth (BW). The proposed PA achieves high saturated output power $(P_{\mathrm{s}\mathrm{a}\mathrm{t}})$ and power-added efficiency …
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Читать далееThis paper presents a fully-integrated D-band bistatic frequency-modulated continuous-wave radar transceiver (TRX) chip based on 130 nm SiGe BiCMOS technology. The TRX chip consists of an active IQ modulator and an IQ down-conversion mixer. It is based on a χ 6 frequency multiplier chain, with a 40-GHz frequency doubler and a 120-GHz frequency …
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Читать далее/ A 24-30 GHz Broadband Doherty Pa with a Maximum 15.37 dBm Pavg and 14.6% PAEavg in 0.13 µm SiGe for 400 MHz BW 5G NR. 2022 European Solid-state Devices and Circuits Conference (ESSCIRC). Institute of Electrical …
Читать далееJul 26, 2021 · A 250-310 GHz Power Amplifier with 15-dB Peak Gain in 130-nm SiGe BiCMOS Process for Terahertz Wireless System ... The measured amplifier achieved a peak power gain of 10.9 dB at 283 GHz and a 3 ...
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