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Читать далееAn efficient power amplifier (PA) is demonstrated in a 0.12-μm silicon germanium (SiGe) BiCMOS process at 45 GHz. The amplifier is a single stage common-emitter amplifier (CE). The voltage handling capability of the amplifier is extended by a low impedance biasing network. The amplifier achieves a peak power-added efficiency (PAE) of 25 % at an …
Читать далееSep 16, 2024 · A PAE advantage of 6%–8% for a fixed saturated output power of 30 dBm is predicted at 28 GHz. To demonstrate the capability of the method, a high-power Ka-band PA in 130-nm silicon germanium (SiGe) BiCMOS using resonated amplifier cores is designed. At 28 GHz, the PA achieves a saturated output power of 30.8 dBm at a …
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Читать далееAbstract: This paper presents a two-stage wideband W-band power amplifier (PA) designed in 130 nm SiGe BiCMOS technology. By employing the gain-distribution technique, the PA delivers a flat gain response over a wide bandwidth (BW). The proposed PA achieves high saturated output power $(P_{\mathrm{s}\mathrm{a}\mathrm{t}})$ and power-added …
Mar 15, 2004 · The HBT base layer consists of an epitaxial layer stack with a linearly graded Ge profile from 15% (substrate side) down to 0%, followed by a Si cap layer of 20–40 nm.“Standard” SiGe process temperatures are in the 600–650 °C range.The addition of HCl to ensure selectivity makes the growth rate to decrease.
Читать далееFeb 17, 2021 · 69–78 GHz ESD-protected SiGe BiCMOS PA with 30 dB automatic level control for mm-wave 5G applications ... –30 –25 –20 –15 input power, dBm –10 –5 0 gain PAE 5 55 60 65 70 75 frequency, GHz a b 80 85 90 Fig. 2 Measurement results aS-parameters of E-band PA b PA gain and PAE versus input power
Читать далееRequest PDF | On Sep 19, 2022, Hao Gao and others published A 24-30 GHz Broadband Doherty PA with a maximum 15.37 dBm P avg and 14.6% PAE avg in 0.13 μm SiGe for 400 MHz BW 5G NR | Find, read and ...
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